Ge/SiGe Asymmetric Quantum Wells for Second Harmonic Generation in the Mid-Infrared

Jacopo Frigerio; Andrea Ballabio; Chiara Ciano; Andrea Mancini; Leonetta Baldassarre; Jonas Allerbeck; Joel Kuttruff; Giovanni Isella; Daniele Brida; Michele Virgilio; Michele Ortolani

2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 2019),
paper cd_p_7

Ge/SiGe Asymmetric Quantum Wells for Second Harmonic Generation in the Mid-Infrared

Jacopo Frigerio, Andrea Ballabio, Chiara Ciano, Andrea Mancini, Leonetta Baldassarre, Jonas Allerbeck, Joel Kuttruff, Giovanni Isella, Daniele Brida, Michele Virgilio, and Michele Ortolani

The European Conference on Lasers and Electro-Optics 2019

Munich Germany
23–27 June 2019
ISBN: 978-1-7281-0469-0

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J. Frigerio, A. Ballabio, C. Ciano, A. Mancini, L. Baldassarre, J. Allerbeck, J. Kuttruff, G. Isella, D. Brida, M. Virgilio, and M. Ortolani, "Ge/SiGe Asymmetric Quantum Wells for Second Harmonic Generation in the Mid-Infrared," in 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, OSA Technical Digest (Optica Publishing Group, 2019), paper cd_p_7.

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Abstract

In this work we present model calculations and experimental verification of the giant nonlinear coefficients provided by intersubband transitions in hole-doped Ge/SiGe and Si/SiGe asymmetric quantum wells in the mid-infrared. We develop a model for the valence band-structure of the SiGe alloy including heavy-hole, light-hole and split-off bands for any value of Ge concentration, so as to obtain heterojunction parameters for the calculation of the wavefunction of confined hole states in quantum wells.

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