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  • 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper ce_10_5

Integration of Metal- GaAs -Metal Photodetectors on Si using Thin Ge Buffer Layers for Applications in Visible Photonics

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Abstract

Monolithic integration of III-V materials on silicon appears as the most promising, cost-effective and versatile method for the next generation of optoelectronic devices [1-3].

© 2019 IEEE

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