Silicon-integrated high-speed modulators based on barium titanate with record-large Pockels coefficients

Felix Eltes; J. Elliott Ortmann; Pau Castera; Darius Urbonas; Daniele Caimi; Lukas Czornomaz; Pablo Sanchis; Jean Fompeyrine; Stefan Abel

2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference
OSA Technical Digest (Optica Publishing Group, 2019),
paper ci_4_2

Silicon-integrated high-speed modulators based on barium titanate with record-large Pockels coefficients

Felix Eltes, J. Elliott Ortmann, Pau Castera, Darius Urbonas, Daniele Caimi, Lukas Czornomaz, Pablo Sanchis, Jean Fompeyrine, and Stefan Abel

The European Conference on Lasers and Electro-Optics 2019

Munich Germany
23–27 June 2019
ISBN: 978-1-7281-0469-0

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Integrated technologies for data networks (ci_4)

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F. Eltes, J. E. Ortmann, P. Castera, D. Urbonas, D. Caimi, L. Czornomaz, P. Sanchis, J. Fompeyrine, and S. Abel, "Silicon-integrated high-speed modulators based on barium titanate with record-large Pockels coefficients," in 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, OSA Technical Digest (Optica Publishing Group, 2019), paper ci_4_2.

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Abstract

Integrated photonics is a key technology platform for optical communication, sensing, and data processing. Driven by the success of the CMOS industry and the resulting maturity of silicon-based fabrication methods, silicon photonics has evolved as an important candidate to realize integrated photonic circuits (PICs) in a cost-efficient and scalable way. Electrical control of the optical properties is critical in PICs: Fast electro-optical modulators are essential to reach high data rates, low-loss switches are needed to dynamically reconfigure networks, and low-power tuning elements are important to compensate temperature fluctuations.

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