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Frequency-Doubled Wafer-Fused 638 nm VECSEL with an Output Power of 5.6 W

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Abstract

We report on a frequency doubled vertical-external-cavity surface-emitting laser emitting 5.6 W at 635 nm. The cavity employed a wafer-fused AlInGaAs/InP-AlAs/GaAs gain mirror in a V-shaped configuration. The heatsink temperature was 20 °C.

© 2018 The Author(s)

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