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A violet III-nitride vertical-cavity surface-emitting laser with a MOCVD-grown tunnel junction contact

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Abstract

We demonstrated a violet III-nitride vertical-cavity surface-emitting laser (VCSEL) with a GaN tunnel junction (TJ) contact grown by a metalorganic chemical vapor deposition (MOCVD) technique. A peak output power of 319 uW was achieved.

© 2018 The Author(s)

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