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Room temperature lasing from InP/InGaAs nano-ridges at telecom-bands

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Abstract

Densely packed InP/InGaAs nano-ridges are selectively grown on patterned (001) Si substrates. We demonstrate room temperature lasing at telecom-wavelengths under optical pumping from InGaAs QW nano-ridges transferred onto SiO2/Si substrates.

© 2018 The Author(s)

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