Abstract
Indium arsenide quantum dots (QDs) are demonstrated on gallium arsenide on silicon templates by metalorganic chemical vapor deposition. The template threading dislocation density is only 9.5×106 cm−2 and the QDs are of high quality.
© 2019 The Author(s)
PDF ArticleMore Like This
Paul Verrinder, Lei Wang, Bei Shi, Si Zhu, and Jonathan Klamkin
SM2J.2 CLEO: Science and Innovations (CLEO:S&I) 2023
Jonathan Klamkin, Lei Wang, Bei Shi, Simone Tommaso Šuran Brunelli, Hongwei Zhao, and Bowen Song
ITh1A.1 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2019
Chen Shang, Yating Wan, Justin Norman, Daehwan Jung, Qiang Li, Kei May Lau, Arthur C. Gossard, and John E. Bowers
STu3N.1 CLEO: Science and Innovations (CLEO:S&I) 2019