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Low-Voltage-Swing Electro-Absorption Modulator by High Mobility Conductive Oxide on Silicon Waveguide

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Abstract

We present a 5μm length silicon electro-absorption modulator using high mobility indium oxide gate. The device operates at 100 nm optical bandwidth and 2.5 GHz dynamic modulation, which requires only 2V voltage swing.

© 2019 The Author(s)

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