Abstract
The GeSn photodetectors with Sn compositions up to 22.3% were systematically investigated. The maximum cutoff wavelength of 3.7 μm at 300 K and the peak specific detectivity of 9.5×109 cm∙Hz1/2W-1 at 77 K were achieved with 22.3% and 11.4% Sn devices, respectively. Moreover, the infrared images were captured using Ge0.89Sn0.11 photoconductor at 77 K.
© 2019 The Author(s)
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