Abstract
The presence of imperfections during 2D materials grown is undesirable for emerging applications for which large-scale production of high purity materials is essential. There is currently no easily applicable, non-invasive, and fast characterization method for determining, with high resolution and sensitivity, changes in crystallographic orientations as well as grain and other extended defect boundaries over a large 2D crystal area. Therefore, there is a need to develop quantitative metrics to quickly evaluate the quality of 2D crystals and provide direct feedback for process control during material growth.
© 2019 IEEE
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