Abstract

Room temperature lasing near 1.55µm was achieved from InGaAsP photonic crystal microcavity laser (PCML) integrated with an AlGaAs oxide aperture through wafer bonding and wet oxidizing 1.2µm thick Al0.98Ga0.02As materials. The threshold incident optical pumping power for PCML ranges from 6mW to 12mW, depending on the aperture size and lateral position in relative to the microcavity.

© 2004 Optical Society of America

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