Abstract

We describe the extension of excitation correlation to the mid-infrared. This novel technique provides a convenient alternative to more complicated optical pump-probe and time-resolved photoluminescence approaches for investigating electron-hole recombination and radiative processes in semiconductors. Excitation correlation is used to determine the recombination coefficients for a GaInSb/InAs superlattice. Full-text article is not available.

© 2004 Optical Society of America