Abstract

Si3N4 coating on GaAs surface dramatically increases its breakdown field and doubles Terahertz wave generation from GaAs antenna. Sealing the coated antenna by silicon gel increases additional 50 percent of the breakdown field. Terahertz power can be increased for 1 order by Si3N4 coating and silicon gel sealing.

© 2004 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription