Abstract

Time resolved photoluminescence and differential transmission/reflection were measured from ZnO bulk and epitaxial layers. Increased carrier relaxation rates induced by stimulated emission were observed in epitaxial layers. The carrier lifetimes in epitaxial layers (~50 ps) were much shorter than in bulk samples (>1 ns) due to increased nonradiative decay. Full-text article is not available.

© 2004 Optical Society of America