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Investigation of Defect States of HfO2 and SiO2 on p type Silicon using THz Spectroscopy

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Abstract

As a non contact characterization tool, visible pump - THz probe spectroscopy provides distinct spectra for high κ gate dielectrics. The interfacial defect density is found to be larger for HfO2than for SiO2.

© 2005 Optical Society of America

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