UPML for Gain Medium in FDTD Simulation with Multi-Level Multi-Electron Model

Qian Wang; Seng-Tiong Ho

doi:10.1364/FIO.2009.FThK4

Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper FThK4
•https://doi.org/10.1364/FIO.2009.FThK4

UPML for Gain Medium in FDTD Simulation with Multi-Level Multi-Electron Model

Qian Wang and Seng-Tiong Ho

Frontiers in Optics 2009

San Jose, California United States
11–15 October 2009
ISBN: 978-1-55752-878-0

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Optoelectronics (FThK)

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Q. Wang and S. Ho, "UPML for Gain Medium in FDTD Simulation with Multi-Level Multi-Electron Model," in Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper FThK4.

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Abstract

Perfect matched layer with un-split field for gain medium in FDTD simulation incorporating multi-level multi-electron model is presented. Numerical validation indicates the boundary derived can absorb the wave effectively under different carrier densities (injection currents).

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