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Silicon/AlGaInAs Heterogeneouly Integrated Laser with High-Reflectivity Right-Angled-Wedge Retro-Reflector

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Abstract

We report the design and experimental results of an electrically pumped Silicon/AlGaInAs evanescent laser with right-angled-wedge reflector defined in the silicon layer. A continuous-wave laser with a lasing threshold current density of 2.8kA/cm2 is achieved.

© 2010 Optical Society of America

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