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Conferences > FiO > 2010 > FWD > FWD6

On the Temperature Dependence of Monolithically Integrated Ga(NAsP)/(BGa)P/Si QW Lasers

Nadir Hossain, Shirong R. Jin, Stephen J. Sweeney, Sven Liebich, Peter Ludewig, Martin Zimprich, Bernardette Kunert, Kerstin Volz, and Wolfgang Stolz

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Abstract

Lasing operation up to 120K is reported in novel direct band-gap Ga(NAsP)/(BGa)P lasers grown monolithically on a silicon substrate. A carrier leakage process is found to dominate the temperature dependence of the laser threshold current.

© 2010 Optical Society of America

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