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Conferences > FiO > 2014 > JTu3A > JTu3A.34

Photovoltaic properties of p-i-n InGaAs/GaAs heterostructures

Marianna S. Kovalova and Serhiy V. Kondratenko

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Abstract

Spectral dependence, transient of photovoltage and photocurrent in p-i-n heterostructure InGaAs/GaAs with quantum wires embedded in the i-region were research in the temperature range from 77 K to 290 K. It was shown that the introduction of quantum wires leads to increased efficiency, the expansion of the spectral range photosensitivity and decrease the lifetime of nonequilibrium charge carriers.

© 2014 Optical Society of America

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