Group IV Photonics for the Mid-Infrared

G. Z. Mashanovich; M. Nedeljkovic; J. Soler Penades; C. J. Mitchell; A. Z. Khokhar; C. J. Littlejohns; S. Stankovic; B. Troia; V. M. N. Passaro; L. Shen; N. Healy; A. C. Peacock; A. Ortega-Monux; G. Wanguemert-Perez; R. Halir; I. Molina-Fernandez; D. Benedikovic; G. S. Murugan; J. S. Wilkinson; P. Cheben; A. Villafranca; J. J. Ackert; A. P. Knights; D. J. Thomson; F. Y. Gardes; G. T. Reed

doi:10.1364/IPRSN.2015.IT3A.2

Advanced Photonics 2015
OSA Technical Digest (online) (Optica Publishing Group, 2015),
paper IT3A.2
•https://doi.org/10.1364/IPRSN.2015.IT3A.2

Group IV Photonics for the Mid-Infrared

G. Z. Mashanovich, M. Nedeljkovic, J. Soler Penades, C. J. Mitchell, A. Z. Khokhar, C. J. Littlejohns, S. Stankovic, B. Troia, V. M. N. Passaro, L. Shen, N. Healy, A. C. Peacock, A. Ortega-Monux, G. Wanguemert-Perez, R. Halir, I. Molina-Fernandez, D. Benedikovic, G. S. Murugan, J. S. Wilkinson, P. Cheben, A. Villafranca, J. J. Ackert, A. P. Knights, D. J. Thomson, F. Y. Gardes, and G. T. Reed

Integrated Photonics Research, Silicon and Nanophotonics 2015

Boston, Massachusetts United States
27 June–1 July 2015
ISBN: 978-1-55752-000-5

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Novel Integration Techniques (IT3A)

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G. Z. Mashanovich, M. Nedeljkovic, J. S. Penades, C. J. Mitchell, A. Z. Khokhar, C. J. Littlejohns, S. Stankovic, B. Troia, V. M. N. Passaro, L. Shen, N. Healy, A. C. Peacock, A. Ortega-Monux, G. Wanguemert-Perez, R. Halir, I. Molina-Fernandez, D. Benedikovic, G. S. Murugan, J. S. Wilkinson, P. Cheben, A. Villafranca, J. J. Ackert, A. P. Knights, D. J. Thomson, F. Y. Gardes, and G. T. Reed, "Group IV Photonics for the Mid-Infrared," in Advanced Photonics 2015, OSA Technical Digest (online) (Optica Publishing Group, 2015), paper IT3A.2.

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Abstract

In this paper we present SOI, suspended Si, and Ge-on-Si photonic platforms and mid-IR passive and active devices based on these platforms. We demonstrate low loss waveguides, splitters, filters, interferometers and spectrometers in different material platforms. Mid-infrared detection using defect engineered silicon waveguides is reported at the wavelength of 2-2.5 µm. All optical modulation in Ge is also analyzed. Finally, theoretical investigation of electroabsorption and electrorefraction in Ge is reported.

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