Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • JSAP-OSA Joint Symposia 2019 Abstracts
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper 20p_E215_1

Broad gain spectrum InAs/InP quantum-dot materials and their laser devices

Not Accessible

Your library or personal account may give you access

Abstract

Broad gain spectrum light sources such as widely tunable semiconductor lasers are attractive for a wide range of applications including precision measurement, biomedical treatment, and environment monitoring. Furthermore, broadband lasers emitting in the 1.55 µm region are of great interest for fiber-optic communication applications such as dense wavelength division multiplexing system. Self-assembled quantum dots (QDs) grown in the Stranski-Krastanow mode are ideal candidates for broad gain spectrum medium, which usually have a large inhomogeneous broadening resulting from the random distribution of the QDs on their growth surface, e.g., the photoluminescence linewidth from the self-assembled InAs/InP QDs is typically greater than 200 nm [1]. This large inhomogeneous broadening is beneficial to broaden the gain spectrum of QD devices. In this talk, I will present our works on the development of broad gain spectrum InAs/InP QD materials and laser devices including ultra-broadband tunable InAs/InP QD external cavity lasers [2, 3], ultrashort pulse InAs/InP QD single-section mode-locked lasers with high output power [4, 5], and flat-topped ultrabroad stimulated emission InAs/InP QD lasers [6].

© 2019 Japan Society of Applied Physics, The Optical Society (OSA)

PDF Article
More Like This
Narrow Linewidth InAs/InP Quantum Dot DFB Laser

Tali Septon, Sutapa Gosh, Annette Becker, Vitalii Sichkovskyi, Florian Schnabel, Anna Rippien, Johann Peter Reithmaier, and Gadi Eisenstein
W3A.8 Optical Fiber Communication Conference (OFC) 2019

Single Mode InAs/InP Quantum-dot Microcavity Lasers

Jin-Long Xiao, Yue-De Yang, Shuai Luo, Hai-Ming Ji, Tao Yang, and Yong-Zhen Huang
AM2A.2 Asia Communications and Photonics Conference (ACP) 2015

Time-resolved characterization of InAs/InGaAs quantum dot gain material for 1.3 µm lasers on gallium arsenide

A. Fiore, P. Borri, W. Langbein, J. M. Hvam, U. Oesterle, R. Houdré, and M. Ilegems
CWL4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved