Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells

Not Accessible

Your library or personal account may give you access

Abstract

Interwell carrier transport, important for efficient LED and laser diode operation, was studied in InGaN multiple quantum wells by time-resolved photoluminescence. A strong increase in transport efficiency was achieved in structures in which GaN barriers were replaced with that of InGaN.

© 2019 The Author(s)

PDF Article
More Like This
Engineering of quantum barriers for efficient InGaN quantum well LEDs

Rinat Yapparov, Cheyenne Lynsky, Yi Chao Chow, Shuji Nakamura, Steven P. DenBaars, James S. Speck, and Saulius Marcinkevičius
NoW4D.6 Novel Optical Materials and Applications (NOMA) 2022

Interwell carrier transport in InGaAsP quantum well lasers: effect of valence band barrier height

Christofer Silfvenius, Saulius Marcinkevičius, and Gunnar Landgren
CWL4 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1998

Picosecond Carrier Transport and Capture for InGaN/GaN Single and Multiple Quantum Wells

S. B. Fleischer, S. Keller, A. C. Abare, L. A. Coldren, U. K. Mishra, S. P. DenBaars, and J. E. Bowers
UFB5 Ultrafast Electronics and Optoelectronics (UEO) 1999

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved