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Growth of NiO thin film for p-NiO/n-Si heterojunction UV-Visible photodetector

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Abstract

We optimize the oxygen working pressure for pulsed laser deposition of NiO thin films for the fabrication of p-NiO/n-Si photodiode. We show the responsivity ~0.05 for UV illumination and 0.01 A/W in case of visible.

© 2019 The Author(s)

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