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High speed modulation characteristics, as well as simplification of communication systems., can. be significantly improved by using integrated optoelectronic circuits. Semi-insulating (SI) GaAs crystals are the most suitable substrates for such circuits wherever GaAlAs lasers or LEDs are involved. The fabrication of a reliable low threshold current laser is a design goal of such systems. We report here on the fabrication of a buried-hetero- structure (BH) laser on SI GaAs substrates with characteristics comparable with the conventional BH laser on conductive substrates. The attractive features of this laser include low threshold current (15-30 mA), stable transverse mode operation, and linear light-current characteristics.
© 1981 Optical Society of America
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