Abstract
The band gap in mixed semiconductors can be varied over a wide range, and laser emission has been reported from ~0.7 to beyond 30 μm. Simple theory suggests that at the longer wavelength less current density is required for stimulated emission. Experience, however, shows that this is not normally true. As the wavelength is increased the threshold current starts to become sensitively dependent on temperature, so that around or above room temperature its value actually increases rather than decreases with wavelength. Most experimental work has been carried out In the 1.1-1.65-μm wavelength range on (GaIn)(AsP)/InP heterostructure lasers.
© 1981 Optical Society of America
PDF ArticleMore Like This
G.H.B. Thompson
WE3 Integrated and Guided Wave Optics (IGWO) 1982
J. O’Gorman, A. E. J. Levi, S. Schmitt-Rink, T. Tanbun-Ek, D. L. Coblentz, and R. A. Logan
CTuF5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992
M. Takusagawa
TUA1 Optical Fiber Communication Conference (OFC) 1981