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High-power single-mode semiconductor injection lasers

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Abstract

High-power diode-laser operation in a single mode (spatial and/or longitudinal) is required in applications such as long distance or data bus optical communication systems, analog signal transmission, optical recording, guided-wave signal processing, and high-speed printing. To achieve single-mode cw or near-cw reliable operation at high-power levels (15-40 mW) two basic approaches have been pursued: (1) structures of large lasing spot size, both parallel and perpendicular to the junction, together with a mode-dependent loss mechanism,1–3 and (2) mode-stabilized structures with nonabsorbing mirror facets.4,5 These approaches are discussed and followed by a description and critical comparison of four major types of high-power single-mode laser: constricted double-heterojunction large optical cavity (CDH-LOC)1; channel substrate planar (CSP)2; crank-type transverse junction stripe (crank-TJS)4; and buried-heterostructure large optical cavity (BH-LOC).3

© 1982 Optical Society of America

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