Abstract
InGaAsP buried-heterostructure laser diodes are particularly attractive as light sources for optical fiber communication systems in the 1.2-1.6-μm wavelength regions. We have previously reported planar buried-heterostructure laser diodes (PBH-LD)1 characterized by a unique current confinement structure. Although the PBH-LDs had a low threshold current, high-power operation over 20 mW was difficult due to a leakage current increase at high injection. Here we present modified PBH-LDs with improved current confinement, which showed 43 % power conversion efficiency and more than 50-mW cw output power from one facet.
© 1982 Optical Society of America
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