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InGaAs APDs: prospect for use In longwavelength lightwave systems

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Abstract

Whereas silicon avalanche photodiodes are commonly used for short-wavelength lightwave systems, much attention has been paid to the design of PIN detectors in conjunction with low noise FET amplifiers for long-wavelength (1.3-1.6-μm) applications. There is in fact some conjecture as to whether a long-wavelength APD will provide any advantage over the PIN/FET combination. This paper will address the advantages of using an APD and describe the necessary characteristics of such a device to provide enhanced receiver performance.

© 1982 Optical Society of America

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