Abstract
Single-longitudinal-mode (SLM) operation of rapidly modulated InGaAsP/InP semiconductor lasers is attractive for long-haul wideband fiber-optic communication systems. Among several schemes of SLM LDs, DFB1,2 or DBR3 lasers are most promising for their stable SLM operation potentially in a wide-temperature and high-power range. DFB lasers reported so far have not exhibited sufficient performance for practical use with respect to lasing characteristics and particularly for reproducibility. In this paper high lasing performance as well as preliminary results on SLM in-wafer uniformity is described for InGaAsP/InP DFB LDs with a double-channel planar buried heterostructure (DC-PBH).4
© 1984 Optical Society of America
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