Improved high-temperature performance of 1.52-μm InGaAsP laser diodes fabricated with two-step vapor-phase and liquid-phase epitaxial growth

T. Yanase; Y. Kato; M. Kitamura; K. Nishi; M. Yamaguchi; H. Nishimoto; I. Mito; R. Lang

doi:10.1364/OFC.1985.ME7

Optical Fiber Communication
1985 OSA Technical Digest Series (Optica Publishing Group, 1985),
paper ME7
•https://doi.org/10.1364/OFC.1985.ME7

Improved high-temperature performance of 1.52-μm InGaAsP laser diodes fabricated with two-step vapor-phase and liquid-phase epitaxial growth

T. Yanase, Y. Kato, M. Kitamura, K. Nishi, M. Yamaguchi, H. Nishimoto, I. Mito, and R. Lang

Optical Fiber Communication Conference 1985

San Diego, California United States
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High Speed and High Power Lasers (ME)

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T. Yanase, Y. Kato, M. Kitamura, K. Nishi, M. Yamaguchi, H. Nishimoto, I. Mito, and R. Lang, "Improved high-temperature performance of 1.52-μm InGaAsP laser diodes fabricated with two-step vapor-phase and liquid-phase epitaxial growth," in Optical Fiber Communication, 1985 OSA Technical Digest Series (Optica Publishing Group, 1985), paper ME7.

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Abstract

It is very desirable to improve the high-temperature performance characteristics of the 1.5–1.6-μm InGaAsP/InP laser diodes (LDs), which have so far been inferior to those of the 1.3-μm LDs.¹ We report improvement in the temperature dependence of 1.52-μm InGaAsP/lnP double-channel planar-buried-heterostructure (DCPBH) LDs,² which has been achieved by using two-step vapor phase epitaxy (VPE) and liquid phase epitaxy (LPE) crystal growth. We discuss the reason for the temperature-dependence improvement.

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