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Very high uniformity of very low-threshold high-reliability 1.30-μm buried heterostructure laser diodes grown by metal-organic chemical vapor deposition

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Abstract

The low-pressure metal-organic CVD growth technique is very promising for large-scale production of GaInAsP-InP buried heterostructure lasers emitting at 1.3 (Ref. 1) and 1.5 μm (Ref. 2) and of distributed feedback lasers.3,4 Figure 1 shows the structure of the device.

© 1986 Optical Society of America

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