Abstract

In conventional traveling wave Integrated-optic modulators, a trade-off exists between drive voltage and modulation bandwidth due to the velocity mismatch between the modulating microwave signal and the guided optical wave. This trade-off is normally controlled by the device length, whereby the extended bandwidth can only be achieved by shortening the device at the expense of increased drive voltage. Devices at 1.3 μm have been reported both in GaAs1 and UNbO3,2 which achieve bandwidths In excess of 20 GHz but require drive voltages In excess of 25 V due to their short length.

© 1988 Optical Society of America

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