Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Low-threshold high-efficiency 1.55-μm distributed feedback p-substrate partially inverted buried heterostructure laser diode

Not Accessible

Your library or personal account may give you access

Abstract

1.55-μm InGaAsP/lnP distributed feedback laser diodes (DFB LDs) have been developed utilizing a p-substrate partially inverted buried heterostructure (PPIBH)1 and an HR/AR coating scheme. This laser diode shows excellent characteristics, such as a low-threshold current of 9 mA, high efficiency of 0.27 mW/mA, stable single-longitudinal-mode operation (side-mode suppression ratio SMSR > 35 dB), and a high-speed response of over 3 GHz.

© 1988 Optical Society of America

PDF Article
More Like This
High-efficiency and high-speed operation in 1.55-μm λ/4-shifted DFB-DC-PBH LD with a new window structure

M. YAMAGUCHI, S. TAKANO, S. FUJITA, T. NUMAI, IKUO MITO, and K. KOBAYA-SHI
ThK4 Optical Fiber Communication Conference (OFC) 1988

Growth of low-threshold high-efficiency 1.3-μm InGaAsP/InP distributed feedback lasers by vapor phase epitaxy

J. P. BLAHA, K. E. STREGE, J. L. ZILKO, L. J.-P. KETELSEN, M. W. FOCHT, V. G. RIGGS, L. A. GRUEZKE, S. N. G. CHU, S. Y. LEUNG, and S. A. KEESSER
WB1 Optical Fiber Communication Conference (OFC) 1989

High-power high-reliability operation of 1.3-μm p-substrate buried crescent laser diodes

Y. NAKAJIMA, Y. KOKUBO, Y. SAKAKIBARA, S. KAKIMOTO, H. NAMIZAKI, and H. HIGUCHI
ME2 Optical Fiber Communication Conference (OFC) 1987

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved