Abstract

1.55-μm InGaAsP/lnP distributed feedback laser diodes (DFB LDs) have been developed utilizing a p-substrate partially inverted buried heterostructure (PPIBH)1 and an HR/AR coating scheme. This laser diode shows excellent characteristics, such as a low-threshold current of 9 mA, high efficiency of 0.27 mW/mA, stable single-longitudinal-mode operation (side-mode suppression ratio SMSR > 35 dB), and a high-speed response of over 3 GHz.

© 1988 Optical Society of America

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