Abstract

An InGaAs-APD, with not only a larger gain-bandwidth product but also a wider bandwidth in the lower multiplication regime (M ≤ 10), is required for Gbs range optical transmission systems. Previously, we reported an improved gain-bandwidth product APD, achieved by increasing the carrier concentration in the InP multiplication region to reduce the avalanche buildup time.1 We report further improvement in the bandwidth by reducing the active area and heterostructure modifications.

© 1988 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription