Abstract

High-power 1.3-μm semiconductor lasers with wide modulation bandwidths are of great interest to the transmission of microwave signals via fiber optics. We report on the X-band (8-12-GHz) modulation of high-power (~30 mW/ facet) 1.3-μm GaInAsP buried crescent (BC) lasers grown on V-grooved p-InP substrates. The differential quantum efficiency of these lasers is ~1.5 times that of previously reported 1.3-μm lasers possessing a similar bandwidth.1

© 1988 Optical Society of America

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