Abstract

Monolithic InGaAs PIN/FETs are considered as competitors to APDs for high-speed long-haul optical transmissions at 1.3–1.6 μm.1,2 However, high- performance photodiodes and transistors call for conflicting requirements in terms of active layer thicknesses and doping levels; this incompatibility has so far hampered development of a high-sensitivity high-speed PIN/FET.

© 1988 Optical Society of America

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