Abstract

The integration of active laser devices with transparent waveguides is an important capability for the realization of III—V advanced optoelectronics. Impurity-induced disordering (IID) has demonstrated its utility in the formation of buried heterostructure lasers,1 and recently there has been work studying the optical waveguiding properties of the waveguides formed by IID.2,3 We present results on a dual-cavity laser with the cavities coupled by a low-loss waveguide. The entire structure is planar, and both the buried heterostructure gain region and the waveguide region are readily fabricated using IID techniques. Figure 1 shows the overall structure of the device. In the waveguide region, the IID enabling Si diffusion has been allowed to disorder the entire active region beneath a masking stripe.

© 1988 Optical Society of America

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