Monolithically integrated receivers hold great promise for long-wavelength optoelectronics. This paper reports on OEICs made using a single lattice-matched MOVPE stage on a semi-insulating InP substrate where the electrical and optical layers can be chosen independently. The use of recessed photo-diodes allows quasiplanar processing and facilitates high-resolution photolithiography. Heterojunction JFETs with GaInAs channels are chosen for high speed and low noise.

© 1989 Optical Society of America

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