There is increasing interest in electroabsorption modulators for applications in both optical communication and computers. Devices exploiting the Franr-Keldysh effect in which the optical absorption changes with electric field are potential structures for modulator arrays. Such structures would be capable of operating over a greater wavelength range (Δλ > 0.1 μm) than multiquantum well (MQW) modulators. To minimize the drive voltage to be compatible with TTL it is essential to fabricate selective contacts, which allow multiple pn junctions to be biased in parallel. A technique is presented of fabricating selective contacts to In1−xGaxAsyP1−y, multilayer structures which utilize standard process technology and the particular contact properties of quaternary material.

© 1989 Optical Society of America

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