Abstract

Recently, laser diode (LD) driver GaAs ICs, which can operate over 2 Gbit/s, have emerged.1-3 Nevertheless, these ICs, which are ever reported, leave something to be improved, because they are fabricated with rather complicated wafer processes and require user’s effort such as APC circuit design and packaging. The LD driver IC with reinforced convenience has been developed with a mass-produced wafer process and has achieved over 4-Gbit/s operation stably in the form of a standard leadless chip carrier (LCC) package.

© 1989 Optical Society of America

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