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Sub-Nanojoule Electro-Optic Switching Using Ge2Sb2Te5Integrated on Silicon Waveguide

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Abstract

We report electro-thermal investigation of 1×1 non-volatile switch operating at 1.55 µm, using reversible phase change in Ge2Sb2Te5. The switch provides 26.43 dB extinction ratio and 1.62 dB insertion loss with sub-nano joule switching energy.

© 2019 The Author(s)

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