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High performance semiconductor nanowire and graphene Terahertz nanodetectors

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Abstract

We report on the development of antenna-coupled plasma-wave field effect transistors based on InAs-nanowire or graphene, operating as room-temperature detectors in the 0.3-3THz range with responsivities ~110V/W and noise-equivalent power levels <10−10W/Hz1/2 suitable for large-area imaging applications.

© 2014 Optical Society of America

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