Abstract

In this paper, modeling for a lateral impact ionization InGaAs/InP avalanche photodiode (APD) has been performed based on a device simulator, i.e., Silvaco ATLAS. Compared with traditional APDs, the lateral impact ionized APD has much higher gains as well as lower excess noise. The internal gain for our newly proposed lateral APD is over 1000—near the breakthrough voltage. In addition, the excess noise characteristic of this device is also discussed with three-dimensional dead space multiplication theory, and the calculated effective $k$ value is obviously lower than traditional InGaAs/InP APDs. Because of the high gain and low excess noise characteristics, the proposed APD can be widely applied for optical detection with high sensitivity.

© 2020 Optical Society of America

Effects of multiplication layers on dark current components of InGaAs/InP avalanche photodiodes

Aofei Liu, Junqin Zhang, Hailong Xing, and Yintang Yang
Appl. Opt. 58(19) 5339-5346 (2019)

High gain, low noise 1550  nm GaAsSb/AlGaAsSb avalanche photodiodes

S. Lee, X. Jin, H. Jung, H. Lewis, Y. Liu, B. Guo, S. H. Kodati, M. Schwartz, C. Grein, T. J. Ronningen, J. P. R. David, Joe. C. Campbell, and S. Krishna
Optica 10(2) 147-154 (2023)

Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes

Pin Jern Ker, John P. R. David, and Chee Hing Tan
Opt. Express 20(28) 29568-29576 (2012)

InGaAs–InP avalanche photodiodes with dark current limited by generation-recombination

Yanli Zhao, Dongdong Zhang, Long Qin, Qi Tang, Rui Hua Wu, Jianjun Liu, Youping Zhang, Hong Zhang, Xiuhua Yuan, and Wen Liu
Opt. Express 19(9) 8546-8556 (2011)

InAlAs/InGaAs avalanche photodiode arrays for free space optical communication

Mike S. Ferraro, William R. Clark, William S. Rabinovich, Rita Mahon, James L. Murphy, Peter G. Goetz, Linda M. Thomas, Harris R. Burris, Christopher I. Moore, William D. Waters, Kenneth Vaccaro, and Brian D. Krejca
Appl. Opt. 54(31) F182-F188 (2015)