Abstract
We report on the high-performance nanoporous (NP) GaN-based metal-insulator-semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a thermal oxidized insulating layer. The devices show a high responsivity of and maximum external quantum efficiency of at 360 nm under a 10 V applied bias, which are attributed to the trap-assisted tunneling induced internal gain mechanism. Correspondingly, a specific detectivity of Jones and excellent optical switching repeatability are also observed in our fabricated PDs. The MIS UV PD may act as an excellent candidate for the application in UV photodetection due to the high performance and simple fabrication process.
© 2019 Optical Society of America
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