Abstract

Impurity doped silicon detector arrays sensitive to long ir wavelengths, based on monolithic processing, were designed and developed. These arrays provide optimized performance utilizing ir transparent detector contacts and reflecting counterelectrodes while minimizing electrical and optical cross talk and providing precise optical definition for the detectors. The microelectronic batch processing procedures are discussed, and the array performance obtained using these procedures is presented. This includes spectral response, the dependence of detectivity on temperature and frequency, the electrical and optical cross talk, and the optical definition obtained. The development is expected to serve as a processing guide for future arrays which will include on-chip signal processing.

© 1977 Optical Society of America

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