Abstract

Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6–4-μm spectral range with a noise equivalent power (NEP) of ~10−16 Hz−1/2 for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.

© 1981 Optical Society of America

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