Abstract

A multiple angle ellipsometric method is used for the measurement of substrates covered by contaminant layers and for the measurement of thin film layers on substrates. The method evaluates the fundamental optical constants N and K of the substrate and film layers deposited on it. Results are given for oxided aluminum films on glass, contamination layers on gallium arsenide, silicon oxide layers on silicon, and silicon nitride layers on silicon. This method is applicable to optical and semiconductor substrate and film evaluation, provided the number of layers in the sample is known and the layers are partially transparent.

© 1982 Optical Society of America

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