Abstract

Transparent conducting ZnO films have been prepared by modified S-gun reactive dc magnetron sputtering using an indium doped Zn target. Films with a resistivity of 1.08 × 10−3 Ω cm and average transmittance of over 80% in the visible region were obtained. The influence of indium content at the surface of Zn target on the resistivity and transmittance of ZnO films was investigated. Optical properties of ZnO films in the 0.2–2.5-μm range were modeled by the Drude theory of free electrons. The reflectance of ZnO films in the 2.5–26.0-μm region was calculated.

© 1989 Optical Society of America

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