Abstract

An array of Ag–Ti–n-GaAs grating photodiodes was designed and fabricated, with each diode having an active area with a diameter of 400 μm. Both electrical and optical characterizations were performed. We have made two experimental observations concerning (1) the surface-plasma-enhanced detectivity as a function of wavelength for 30° angle of incidence and (2) the offset in angle between the reflectivity minimum and the current maximum at the surface-plasma resonance.

© 1991 Optical Society of America

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