Abstract

Gaussian and Lorentzian–Gaussian models for the elliptical cross-section beams of GaAs diode lasers are reexamined, emphasizing that the simplicity of the Gaussian model vanishes in many practical applications where laser beams are truncated by the collimating lens. The Lorentzian model is advantageous because the width of the distribution may be estimated from the composition of the semiconductor junction.

© 1992 Optical Society of America

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